產品資訊Products

HDPSS高密度圖案化藍寶石晶圓High Density Patterned Sapphire Substrate

PSS圖案化藍寶石晶圓PSS圖案化藍寶石晶圓 掃描式電子顯微鏡圖 (Images of Scanning Electron Microscopy, SEM)

產品介紹 Introduction of Products

產品尺寸與規格 Specifications of Products
晶片尺寸(Wafer Size) 圖形規格(Pattern Dimension)
2” 1 x 1 x 1 (µm)
4” 1 x 1 x 1 (µm)

產品特色 Characteristics of Products

  • 適用於高亮度藍光/綠光LED磊晶成長
  • 降低氮化鎵薄膜單位面積上的缺陷密度
  • 提升內部量子效率
  • 提升LED器件的光萃取效能
  • HDPSS微結構高度低,提升LED磊晶製程良率
  • 單片以及批次生產良率高
  • 波長集中性佳
  • 白光LED封裝後亮度可較使用2x1規格之PSS提升約 3%
  • Blue and Green LED epitaxial growth base
  • Less dislocations and defects caused by materials' mismatch in the GaN-based layers
  • Improved the Internal Quantum Efficiency
  • Increased the Light Extraction Efficiency
  • Easy for epitaxial growth
  • High yield rate
  • Excellent wavelength concentrative
  • Around 3% brightness enhancement compare to white light LED using 2x1 PSS after
  • packaging

藍寶石基板特性 Characteristics of Sapphire Substrate

  • Property Characteristics Unit
  • Material 2” High purity monocrystalline (Al2O3)
  • Surface Orientation C-Plane (0001)
  • Off-set Angle toward M-axis 0.20 + 0.1 Degree
  • Off-set Angle toward A-axis 0.0 + 0.25 Degree
  • Orientation Flat A-Plane (11-20)
  • Flat Off-set Angle 0.00 + 0.25 Degree
  • Flat Length 16.0 + 1 mm
  • Diameter 50.8 + 0.25 mm
  • Thickness 430 + 25 µm
  • TTV < 10 µm
  • BOW - 10 ~ 0 µm
  • WARP < 15 µm
  • Back surface roughness 0.8 < Ra < 1.3 µm